Samsung M471A1K43CB1-CTD memory module 8 GB DDR4 2666 MHz

In stock
SKU
M471A1K43CB1-CTD
8GB DDR4, 2666 MHz, CL19, 1.2V
£33.15
 
Samsung DDR4 SODIMM operates at significantly low voltages, and is thus used on almost all mobile and battery-powered devices. As the world’s largest semiconductor memory manufacturer, Samsung has the widest range of SODIMMs for deployment on the broadest range of applications, such as portable/mobile computers, networking hardware, and smartphones, among others. Samsung SODIMMs are optimized to deliver the highest performance at the lowest power consumption levels in the smallest form factors, offering maximum reliability for the end application. They are the default choice for designers, system integrators, and OEMs for the majority of notebook and mobile computers across the globe.

In addition to SODIMM’s features, DDR4 memory is available as SOIMM. Samsung DDR4 SDRAM is the new generation of high-performance, power-efficient memory. As the semiconductor memory is widely used in current generation computers, DDR4 is considered the industry standard commercial version of DRAM memory. Advancements in semiconductor design, development, and fabrication processes have enabled the development of high-performance DRAM memory, making the design of devices and applications, such as ultra-thin notebook computers, possible. Progressive developments in DRAM memory have resulted in newer versions operating at lower voltages, resulting in increasing levels of power savings. By leveraging the full potential of Samsung DDR4, you can increase computing performance, while consuming less energy.
Technical Specification
SKUM471A1K43CB1-CTD
EAN4260580370849
Specification
Power
Memory voltage1.2 V
Design
Product colourBlack,Green
Technical details
Product colourBlack,Green
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Module configuration1024M x 64
Memory ranking1
Memory clock speed2666 MHz
Internal memory typeDDR4
Features
Buffered memory typeUnregistered (unbuffered)
Product colourBlack,Green
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Module configuration1024M x 64
Memory ranking1
Memory clock speed2666 MHz
Internal memory typeDDR4
Operational conditions
Operating temperature (T-T)0 - 85 °C
Weight & dimensions
Width69.6 mm
Height30 mm
ManufacturerSamsung

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